发明授权
- 专利标题: LDMOS with field plate connected to gate
- 专利标题(中): LDMOS与场板连接到门
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申请号: US13194210申请日: 2011-07-29
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公开(公告)号: US09450074B1公开(公告)日: 2016-09-20
- 发明人: Fanling Hsu Yang , Timothy K. McGuire , Sudarsan Uppili , Guillaume Bouche
- 申请人: Fanling Hsu Yang , Timothy K. McGuire , Sudarsan Uppili , Guillaume Bouche
- 申请人地址: US CA San Jose
- 专利权人: Maxim Integrated Products, Inc.
- 当前专利权人: Maxim Integrated Products, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Advent, LLP
- 主分类号: H01L29/40
- IPC分类号: H01L29/40 ; H01L29/66 ; H01L29/78
摘要:
Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the device. In one or more implementations, the semiconductor devices include a substrate having a source region of a first conductivity type and a drain region of the first conductivity type. A gate is positioned over the surface and between the source region and the drain region. The gate is configured to receive a voltage so that a conduction region may be formed at least partially below the gate to allow majority carriers to travel between the source region and the drain region. The device also includes a field plate at least partially positioned over and connected to the gate. The field plate is configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.