发明授权
- 专利标题： FinFET having highly doped source and drain regions
- 专利标题（中）： FinFET具有高掺杂的源极和漏极区域
-
申请号： US14248796申请日： 2014-04-09
-
公开(公告)号： US09450079B2公开(公告)日： 2016-09-20
- 发明人: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Dominic J. Schepis
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Steven Meyers
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L29/10
摘要：
A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin structures from the in-situ doped semiconductor material. A sacrificial channel portion of the fin structures may be removed, wherein a source region and a drain region portion of the fin structures of the in-situ doped semiconductor material remain. The sacrificial channel portion of the fin structure may then be replaced with a functional channel region.
公开/授权文献
- US20150295087A1 FINFET HAVING HIGHLY DOPED SOURCE AND DRAIN REGIONS 公开/授权日：2015-10-15
信息查询
IPC分类:
