Invention Grant
- Patent Title: MEMS devices and fabrication methods thereof
- Patent Title (中): MEMS器件及其制造方法
-
Application No.: US13829106Application Date: 2013-03-14
-
Publication No.: US09450109B2Publication Date: 2016-09-20
- Inventor: Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/02 ; H01L21/50 ; H01L21/30 ; H01L21/20 ; H01L23/00 ; B81C1/00
Abstract:
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.
Public/Granted literature
- US20140103461A1 MEMS Devices and Fabrication Methods Thereof Public/Granted day:2014-04-17
Information query
IPC分类:
