Invention Grant
- Patent Title: Light emitting diode and method of manufacturing the same
- Patent Title (中): 发光二极管及其制造方法
-
Application No.: US14949554Application Date: 2015-11-23
-
Publication No.: US09450153B2Publication Date: 2016-09-20
- Inventor: Hyoung Jin Lim , Chan Seob Shin , Kyu Ho Lee , Tae Gyun Kim , Sung Won Tae
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-Si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-Si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0048180 20140422
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/22

Abstract:
Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.
Public/Granted literature
- US20160087158A1 LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-03-24
Information query
IPC分类: