Invention Grant
- Patent Title: Protection against word line failure in memory devices
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Application No.: US14595578Application Date: 2015-01-13
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Publication No.: US09454429B2Publication Date: 2016-09-27
- Inventor: Shai Ojalvo , Eyal Gurgi , Micha Anholt
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/00 ; H03M13/00 ; G11C7/10 ; G11C5/00

Abstract:
A method for data storage includes providing a mapping of data pages to physical pages, in which each physical page holds a non-integer number of the data pages, for storage of data in at least one memory block, including a plurality of the physical pages, in a memory device. The data pages that are mapped to the memory block are partitioned into groups, such that failure of any memory unit, which consists of a predefined number of the physical pages in the memory device, will produce errors in no more than one data page in each group. The data pages is stored in the physical pages of the memory block in accordance with the mapping, while a redundant storage scheme is applied among the data pages of each group.
Public/Granted literature
- US20150128010A1 PROTECTION AGAINST WORD LINE FAILURE IN MEMORY DEVICES Public/Granted day:2015-05-07
Information query