Invention Grant
- Patent Title: Shared global read and write word lines
- Patent Title (中): 共享全局读写字线
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Application No.: US14546980Application Date: 2014-11-18
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Publication No.: US09455026B2Publication Date: 2016-09-27
- Inventor: Niladri Narayan Mojumder , Stanley Seungchul Song , Zhongze Wang , Ping Liu , Kern Rim , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C8/14 ; H01L27/06 ; G11C8/16
Abstract:
An apparatus includes an array of bit cells that include a first row of bit cells and a second row of bit cells. The apparatus also includes a first global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus further includes a second global read word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The apparatus also includes a global write word line configured to be selectively coupled to the first row of bit cells and to the second row of bit cells. The first global read word line, the second global read word line, and the global write word line are located in a common metal layer.
Public/Granted literature
- US20160141021A1 SHARED GLOBAL READ AND WRITE WORD LINES Public/Granted day:2016-05-19
Information query
