Invention Grant
US09455031B2 System and method for MRAM having controlled averagable and isolatable voltage reference
有权
MRAM的系统和方法具有可控的可分离和可分离的电压参考
- Patent Title: System and method for MRAM having controlled averagable and isolatable voltage reference
- Patent Title (中): MRAM的系统和方法具有可控的可分离和可分离的电压参考
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Application No.: US14161850Application Date: 2014-01-23
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Publication No.: US09455031B2Publication Date: 2016-09-27
- Inventor: Jung Pill Kim , Taehyun Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Kenneth K. Vu
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C5/06 ; G11C7/08 ; G11C29/02

Abstract:
A memory has a plurality of non-volatile resistive (NVR) memory arrays, each with an associated reference voltage generating circuit coupled by a reference circuit coupling link to a reference line, the reference coupled to a sense amplifier for that NVR memory array. Reference line coupling links couple the reference lines of different NVR memory arrays. Optionally, different ones of the reference coupling links are removed or opened, obtaining respective different average and isolated reference voltages on the different reference lines. Optionally, different ones of the reference circuit coupling links are removed or opened, obtaining respective different averaged voltages on the reference lines, and uncoupling and isolating different reference circuits.
Public/Granted literature
- US20140133216A1 SYSTEM AND METHOD FOR MRAM HAVING CONTROLLED AVERAGABLE AND ISOLATABLE VOLTAGE REFERENCE Public/Granted day:2014-05-15
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