Invention Grant
- Patent Title: Method for fabricating a semiconductor chip panel
- Patent Title (中): 制造半导体芯片面板的方法
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Application No.: US13741113Application Date: 2013-01-14
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Publication No.: US09455160B2Publication Date: 2016-09-27
- Inventor: Daniel Porwol , Edward Fuergut
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L21/56 ; H01L23/28 ; H01L23/00 ; H01L23/31
Abstract:
The method comprises providing a carrier, providing a plurality of semiconductor chips, the semiconductor chips each comprising a first main face and a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on the carrier with the second main faces facing the carrier, and applying an encapsulation material to the side faces of the semiconductor chips.
Public/Granted literature
- US20140197551A1 Method for Fabricating a Semiconductor Chip Panel Public/Granted day:2014-07-17
Information query
IPC分类:
