Invention Grant
US09455176B2 Manufacturing method for forming semiconductor structure with sub-fin structures
有权
用于形成具有亚鳍结构的半导体结构的制造方法
- Patent Title: Manufacturing method for forming semiconductor structure with sub-fin structures
- Patent Title (中): 用于形成具有亚鳍结构的半导体结构的制造方法
-
Application No.: US15072370Application Date: 2016-03-17
-
Publication No.: US09455176B2Publication Date: 2016-09-27
- Inventor: Po-Chao Tsao , Lung-En Kuo , Chien-Ting Lin , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L21/308 ; H01L21/3105 ; H01L21/027 ; H01L21/8234
Abstract:
The present invention provides a semiconductor structure including a substrate, at least one fin group and a plurality of sub-fin structures disposed on the substrate, wherein the fin group is disposed between two sub-fin structures, and a top surface of each sub-fin structure is lower than a top surface of the fin group; and a shallow trench isolation (STI) disposed in the substrate, wherein the sub-fin structures are completely covered by the shallow trench isolation.
Public/Granted literature
- US20160197005A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-07-07
Information query
IPC分类:
