发明授权
- 专利标题: Aluminum interconnection apparatus
- 专利标题(中): 铝互连设备
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申请号: US14496780申请日: 2014-09-25
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公开(公告)号: US09455184B2公开(公告)日: 2016-09-27
- 发明人: Ching-Fu Yeh , Hsiang-Huan Lee
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/768 ; H01L23/532
摘要:
A method comprises depositing a first alloy layer over a substrate, depositing a metal layer over the first alloy layer, depositing a second alloy layer over the metal layer, patterning the first alloy layer, the metal layer and the second alloy layer to form a metal structure and depositing a dielectric layer over the metal structure through a chemical vapor deposition (CVD) process.
公开/授权文献
- US20150364370A1 Aluminum Interconnection Apparatus 公开/授权日:2015-12-17