Invention Grant
- Patent Title: Semiconductor structure including a die seal leakage detection material, method for the formation thereof and method including a test of a semiconductor structure
- Patent Title (中): 半导体结构,包括管芯密封泄漏检测材料,其形成方法和包括半导体结构试验的方法
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Application No.: US14515986Application Date: 2014-10-16
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Publication No.: US09455232B2Publication Date: 2016-09-27
- Inventor: Thomas Werner , Frank Feustel , Oliver Aubel
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L21/768 ; H01L21/02 ; H01L21/66 ; H01L23/58 ; H01L23/522 ; H01L23/532

Abstract:
A semiconductor structure includes a semiconductor substrate, one or more interconnect layers provided over the substrate and a circuit. The circuit includes a plurality of circuit elements formed at the substrate and a plurality of electrical connections provided in the one or more interconnect layers. A die seal is provided in the one or more interconnect layers. A die seal leakage detection material is arranged in the one or more interconnect layers between the die seal and the plurality of electrical connections. The die seal provides a protection of the die seal leakage detection material from moisture if the die seal is intact. The die seal leakage detection material is adapted for providing a detectable modification of the circuit after an exposure of the die seal leakage detection material to moisture.
Public/Granted literature
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