Invention Grant
- Patent Title: Image sensor and method of fabricating the same
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Application No.: US14562923Application Date: 2014-12-08
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Publication No.: US09455294B2Publication Date: 2016-09-27
- Inventor: Jin-Ho Kim , Young-Hoon Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0028302 20120320
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0216 ; H01L27/146 ; H01L31/0232

Abstract:
An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate, contact holes extending through the substrate to the circuits, respectively, and a plurality of pads disposed on the backside of the substrate, electrically connected to the circuits along conductive paths extending through the contact holes, and located directly over the circuits, respectively. The image sensor is fabricated by a process in which a conductive layer is formed on the back side of the substrate and patterned to form the pads directly over the circuits.
Public/Granted literature
- US20150145093A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-05-28
Information query
IPC分类: