Invention Grant
- Patent Title: Fluid ejection apparatuses including a substrate with a bulk layer and a epitaxial layer
- Patent Title (中): 流体喷射装置包括具有本体层和外延层的衬底
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Application No.: US14890551Application Date: 2013-06-28
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Publication No.: US09457571B2Publication Date: 2016-10-04
- Inventor: Ning Ge , Chaw Sing Ho , Adam L. Ghozeil , Michael W. Cumbie
- Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Applicant Address: US TX Houston
- Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
- Current Assignee Address: US TX Houston
- Agency: HP Inc—Patent Department
- International Application: PCT/US2013/048651 WO 20130628
- International Announcement: WO2014/209376 WO 20141231
- Main IPC: B41J2/145
- IPC: B41J2/145 ; B41J2/16 ; B41J2/14

Abstract:
Examples of fluid ejection apparatuses and methods for making fluid ejection apparatuses are described. An example method may include forming a fluid feed slot in a bulk layer of a substrate, forming a plurality of ink feed channels in at least an epitaxial layer of the substrate, each of the ink feed channels fluidically coupled to the fluid feed slot, and forming a plurality of drop generators over the substrate such that the epitaxial layer of the substrate is between the plurality of drop generators and the bulk layer and such that the each of the drop generators is fluidically coupled to the fluid feed slot by at least one of the ink feed channels.
Public/Granted literature
- US20160129690A1 Fluid Ejection Apparatuses Including a Substrate with a Bulk Layer and a Epitaxial Layer Public/Granted day:2016-05-12
Information query
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