Invention Grant
- Patent Title: Method for growing GZO (ZnO:Ga) crystals
- Patent Title (中): 生长GZO（ZnO：Ga）晶体的方法
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Application No.: US14780444Application Date: 2014-12-31
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Publication No.: US09458553B2Publication Date: 2016-10-04
- Inventor: Yijian Jiang , Yunfeng Ma , Yue Wang , Xiaoping Mei , Chunping Zhang , Qiang Wang , Yangli Xu
- Applicant: Beijing University of Technology
- Applicant Address: CN Beijing
- Assignee: Beijing University of Technology
- Current Assignee: Beijing University of Technology
- Current Assignee Address: CN Beijing
- Agency: Tian IP & Technology, LLC.
- Priority: CN201410532380 20141010
- International Application: PCT/CN2014/095752 WO 20141231
- International Announcement: WO2016/054866 WO 20160414
- Main IPC: C30B19/02
- IPC: C30B19/02 ; C30B13/02 ; C30B13/00 ; C30B29/16 ; C30B13/22 ; C30B13/34 ; C30B29/22
Abstract:
The disclosure provides a method for growing GZO (ZnO:Ga) single crystals and relates to the technical field of crystal growth. The method may include the following steps: firstly, preparing compact, uniform and single-phase polycrystalline rods; secondly, optimizing the components and the proportions of flux; finally, optimizing the process parameters of travelling solvent floating zone crystal growth method for GZO, such as growth power, growth rate and rotation speed, etc. GZO crystals grown by this disclosure are high in crystalline quality, consistent in growth direction and excellent in electrical properties.
Public/Granted literature
- US20160230308A1 A Method for Growing GZO (ZnO:Ga) Crystals Public/Granted day:2016-08-11
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