Invention Grant
- Patent Title: High temperature atomic layer deposition of silicon oxide thin films
- Patent Title (中): 氧化硅薄膜的高温原子层沉积
-
Application No.: US13857507Application Date: 2013-04-05
-
Publication No.: US09460912B2Publication Date: 2016-10-04
- Inventor: Haripin Chandra , Meiliang Wang , Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Mark Leonard O'Neill , Bing Han
- Applicant: Air Products and Chemicals, Inc.
- Applicant Address: US PA Allentown
- Assignee: Air Products and Chemicals, Inc.
- Current Assignee: Air Products and Chemicals, Inc.
- Current Assignee Address: US PA Allentown
- Agent Rosaleen P. Morris-Oskanian; Joseph D. Rossi
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/02 ; C23C16/40 ; C23C16/455 ; C07F7/10
Abstract:
Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R1R2mSi(NR3R4)nXp; and I. R1R2mSi(OR3)n(OR4)qXp. II
Public/Granted literature
- US20130295779A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS Public/Granted day:2013-11-07
Information query
IPC分类:
