发明授权
US09460914B2 Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium 有权
制造半导体器件,衬底处理设备和非暂时计算机可读记录介质的方法

Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
摘要:
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
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