发明授权
- 专利标题: Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
- 专利标题(中): 制造半导体器件,衬底处理设备和非暂时计算机可读记录介质的方法
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申请号: US14856244申请日: 2015-09-16
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公开(公告)号: US09460914B2公开(公告)日: 2016-10-04
- 发明人: Katsuyoshi Harada , Yoshiro Hirose , Atsushi Sano
- 申请人: HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Kokusai Electric, Inc.
- 当前专利权人: Hitachi Kokusai Electric, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Volpe and Koenig, P.C.
- 优先权: JP2014-188429 20140917
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/34 ; C23C16/36 ; C23C16/38 ; C23C16/455 ; H01J37/32
摘要:
A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.
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