Invention Grant
- Patent Title: Method to co-integrate oppositely strained semiconductor devices on a same substrate
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Application No.: US14955801Application Date: 2015-12-01
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Publication No.: US09460971B2Publication Date: 2016-10-04
- Inventor: Nicolas Loubet , Sylvain Maitrejean , Romain Wacquez
- Applicant: STMICROELECTRONICS, INC. , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: US TX Coppell FR Paris
- Assignee: STMICROELECTRONICS, INC.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: STMICROELECTRONICS, INC.,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: US TX Coppell FR Paris
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/78 ; H01L29/06 ; H01L21/762 ; H01L21/265 ; H01L21/324 ; H01L21/266 ; H01L21/306 ; H01L21/02 ; H01L27/092 ; H01L21/8238
Abstract:
Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.
Public/Granted literature
- US20160079128A1 METHOD TO CO-INTEGRATE OPPOSITELY STRAINED SEMICONDUCTOR DEVICES ON A SAME SUBSTRATE Public/Granted day:2016-03-17
Information query
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