Invention Grant
- Patent Title: Thyristor random access memory device and method
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Application No.: US14028242Application Date: 2013-09-16
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Publication No.: US09461155B2Publication Date: 2016-10-04
- Inventor: Sanh D. Tang , John K. Zahurak , Michael P. Violette
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/74 ; H01L27/102 ; H01L29/423 ; H01L29/66
Abstract:
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.
Public/Granted literature
- US20140015001A1 THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD Public/Granted day:2014-01-16
Information query
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