Invention Grant
- Patent Title: Non-crystalline inorganic light emitting diode
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Application No.: US14605550Application Date: 2015-01-26
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Publication No.: US09461196B2Publication Date: 2016-10-04
- Inventor: Ilyas Mohammed , Liang Wang
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Forefront IP Lawgroup, PLLC
- Main IPC: H01L33/10
- IPC: H01L33/10 ; H01L33/00 ; H01L33/18 ; H01L33/16 ; H05B33/14 ; H05B33/22 ; H01L33/14 ; H01L33/36 ; H01L33/48

Abstract:
Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light emitting diode. The light emitting diode includes a non-crystalline inorganic light emission layer and first and second semiconducting non-crystalline inorganic charge transport layers surrounding the light emission layer. The light emission layer may be amorphous. The charge transport layers may be configured to inject one type of charge carrier and block the other type of charge carrier.
Public/Granted literature
- US20150129876A1 NON-CRYSTALLINE INORGANIC LIGHT EMITTING DIODE Public/Granted day:2015-05-14
Information query
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