The invention relates to a method for producing a connection region (70) of an optoelectronic semiconductor chip (100), comprising the following steps: providing an optoelectronic semiconductor chip (100), forming or exposing a seed layer (6) on an outer surface (100a) of the optoelectronic semiconductor chip (100), and depositing a contact layer sequence (7) on the seed layer (6) without current, wherein the seed layer (6) is formed comprising a metal that enables nickel to be deposited on the seed layer (6) without current, the contact layer sequence (7) comprises a nickel layer (71) as a first layer facing the seed layer (6), and the contact layer sequence (7) has a contact surface (7a) on the side of the contact layer sequence facing away from the seed layer (6), by means of which contact surface the optoelectronic semiconductor chip (100) can be electrically contacted.