Invention Grant
- Patent Title: Method for high-frequency amplifier using power gain-boosting technique
- Patent Title (中): 使用增益增益技术的高频放大器方法
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Application No.: US14590253Application Date: 2015-01-06
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Publication No.: US09461600B2Publication Date: 2016-10-04
- Inventor: Sang-Gug Lee , Bao Lam Huu , Suna Kim , Jeong Seon Lee
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee: Korea Advanced Institute of Science and Technology
- Current Assignee Address: KR Daejeon
- Agency: Womble Carlyle Sandridge & Rice LLP
- Priority: KR10-2014-0058024 20140514
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F3/193 ; H03F1/08 ; G06F17/50 ; H03F1/56 ; H03H7/38

Abstract:
The present invention provides a power gain-boosting technique for an amplifier in order to compensate for the decrease of Gmag in a transistor at high frequencies. A power gain-boosting technique of the present invention comprises the steps of: finding the Maximum Unilateral Gain or Mason's Invariant U of a transistor; designing a linear, lossless, reciprocal network embedding the transistor so that the final equivalent S-, Y-, or Z-parameters satisfy the condition: S 21 S 12 = Y 2 1 Y 1 2 = Z 2 1 Z 1 2 = - [ ( 2 U - 1 ) + 2 U ( U - 1 ) ] ; embedding the transistor into the linear, lossless, reciprocal network; and constructing simultaneous conjugate matching.
Public/Granted literature
- US20150333707A1 METHOD FOR HIGH-FREQUENCY AMPLIFIER USING POWER GAIN-BOOSTING TECHNIQUE Public/Granted day:2015-11-19
Information query
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