Invention Grant
- Patent Title: Reducing MEMS stiction by introduction of a carbon barrier
- Patent Title (中): 通过引入碳屏障来减少MEMS静电
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Application No.: US14529824Application Date: 2014-10-31
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Publication No.: US09463973B2Publication Date: 2016-10-11
- Inventor: Ruben B. Montez , Robert F. Steimle
- Applicant: Ruben B. Montez , Robert F. Steimle
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00 ; G01P15/08

Abstract:
A mechanism for reducing stiction in a MEMS device by decreasing an amount of carbon from TEOS-based silicon oxide films that can accumulate on polysilicon surfaces during fabrication is provided. A carbon barrier material film is deposited between one or more polysilicon layer in a MEMS device and the TEOS-based silicon oxide layer. This barrier material blocks diffusion of carbon into the polysilicon, thereby reducing accumulation of carbon on the polysilicon surfaces. By reducing the accumulation of carbon, the opportunity for stiction due to the presence of the carbon is similarly reduced.
Public/Granted literature
- US20150054096A1 REDUCING MEMS STICTION BY INTRODUCTION OF A CARBON BARRIER Public/Granted day:2015-02-26
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