Invention Grant
US09466430B2 Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
有权
使用双压电晶片的单晶压电MEMS器件中的可变电容器和开关结构
- Patent Title: Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs
- Patent Title (中): 使用双压电晶片的单晶压电MEMS器件中的可变电容器和开关结构
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Application No.: US14071025Application Date: 2013-11-04
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Publication No.: US09466430B2Publication Date: 2016-10-11
- Inventor: Kushal Bhattacharjee
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L41/09
- IPC: H01L41/09 ; H03H9/125 ; H03H9/15 ; H01G5/18 ; H03H9/02 ; H03H9/46 ; H03H9/24 ; B81B3/00
Abstract:
A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.
Public/Granted literature
- US20140125201A1 VARIABLE CAPACITOR AND SWITCH STRUCTURES IN SINGLE CRYSTAL PIEZOELECTRIC MEMS DEVICES USING BIMORPHS Public/Granted day:2014-05-08
Information query
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