发明授权
- 专利标题： Spacer formation with straight sidewall
- 专利标题（中）： 间距形成与直侧壁
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申请号： US14051828申请日： 2013-10-11
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公开(公告)号： US09466496B2公开(公告)日： 2016-10-11
- 发明人: Angela Tai Hui , Scott Bell , Shenqing Fang
- 申请人： Spansion LLC
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/311 ; H01L29/423 ; H01L21/336 ; H01L29/04 ; H01L21/28 ; H01L29/66
摘要：
Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes a cross-section with a perimeter that includes a top curved portion and a vertical portion substantially perpendicular to the substrate. The perimeter further includes a discontinuity at an interface of the top curved portion with the vertical portion. Further, disclosed herein are methods associated with the fabrication of the aforementioned semiconductor device.
公开/授权文献
- US20150102430A1 Spacer Formation with Straight Sidewall 公开/授权日：2015-04-16
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