Invention Grant
US09466537B2 Method of inspecting semiconductor device and method of fabricating semiconductor device using the same 有权
检查半导体器件的方法和使用其制造半导体器件的方法

Method of inspecting semiconductor device and method of fabricating semiconductor device using the same
Abstract:
A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.
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