Invention Grant
- Patent Title: Method of inspecting semiconductor device and method of fabricating semiconductor device using the same
- Patent Title (中): 检查半导体器件的方法和使用其制造半导体器件的方法
-
Application No.: US14988991Application Date: 2016-01-06
-
Publication No.: US09466537B2Publication Date: 2016-10-11
- Inventor: Minkook Kim , Wooseok Ko , Yusin Yang , Sangkil Lee , Chungsam Jun
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2015-0003362 20150109
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66

Abstract:
A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.
Public/Granted literature
- US20160204041A1 METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2016-07-14
Information query
IPC分类: