发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US13229887申请日: 2011-09-12
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公开(公告)号: US09466559B2公开(公告)日: 2016-10-11
- 发明人: Hiromi Shigihara , Hiroshi Tsukamoto , Akira Yajima
- 申请人: Hiromi Shigihara , Hiroshi Tsukamoto , Akira Yajima
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Shapiro, Gabor and Rosenberger, PLLC
- 优先权: JP2008-308585 20081203; JP2009-188913 20090818
- 主分类号: H01L23/498
- IPC分类号: H01L23/498 ; H01L23/00 ; H01L25/065 ; H01L23/485 ; H01L21/66
摘要:
In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).
公开/授权文献
- US20120032329A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日:2012-02-09
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