Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14613343Application Date: 2015-02-03
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Publication No.: US09466678B2Publication Date: 2016-10-11
- Inventor: Shih-Hsien Huang , Che-Wei Chang , Chih-Chieh Yeh , Tzu-I Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201410794508 20141218
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L29/45 ; H01L21/285 ; H01L21/302 ; H01L29/08
Abstract:
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.
Public/Granted literature
- US20160181383A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-06-23
Information query
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