发明授权
- 专利标题: Grain growth for solar cells
- 专利标题(中): 太阳能电池的晶粒生长
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申请号: US14447526申请日: 2014-07-30
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公开(公告)号: US09466754B2公开(公告)日: 2016-10-11
- 发明人: Taeseok Kim
- 申请人: Taeseok Kim
- 申请人地址: US CA San Jose
- 专利权人: SunPower Corporation
- 当前专利权人: SunPower Corporation
- 当前专利权人地址: US CA San Jose
- 代理机构: Blakely Sokoloff Taylor Zafman LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L31/18 ; B29D11/00 ; H01L31/028 ; H01L31/0368
摘要:
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions of the silicon layer can have a grain size larger than other portions of the silicon layer. For example, larger grains of the silicon layer formed within a depletion region between P-type and N-type doped regions can minimize recombination loss at the P-type and N-type doped region boundaries and improve solar cell efficiency.
公开/授权文献
- US20160035930A1 GRAIN GROWTH FOR SOLAR CELLS 公开/授权日:2016-02-04
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