发明授权
- 专利标题： Optoelectronic device and method for manufacturing the same
- 专利标题（中）： 光电子器件及其制造方法
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申请号： US14537058申请日： 2014-11-10
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公开(公告)号： US09466767B2公开(公告)日： 2016-10-11
- 发明人: Jia-Kuen Wang , Chien-Fu Shen , Hung-Che Chen , Chao-Hsing Chen
- 申请人： EPISTAR CORPORATION
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Patterson + Sheridan, LLP
- 优先权： TW102140976A 20131111
- 主分类号： H01L33/40
- IPC分类号： H01L33/40 ; H01L33/00 ; H01L33/60
摘要：
An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a first major plane and a first boundary with a gradually reduced thickness, and a second metal layer formed above the first metal layer, wherein the second metal layer comprise a second major plane paralleling to the first major plane and a second boundary with a gradually reduced thickness, and the second boundary of the second metal layer exceeds the first boundary of the first metal layer.
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