Invention Grant
- Patent Title: Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof
- Patent Title (中): 半导体缓冲结构，包括其的半导体器件及其制造方法
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Application No.: US13837460Application Date: 2013-03-15
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Publication No.: US09472624B2Publication Date: 2016-10-18
- Inventor: Jun-youn Kim , Joo-sung Kim , Moon-seung Yang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0097863 20120904
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L21/02 ; H01L29/267
Abstract:
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride semiconductor layer and the second nitride semiconductor layer. The first nitride semiconductor layer has a first gallium composition ratio, the second nitride semiconductor layer has a second gallium composition ratio different from the first metal composition ratio, and the third layer has a third gallium composition ratio greater than at least one of the first gallium composition ratio or the second gallium composition ratio. The structure may also include a fourth layer for reducing tensile stress or increasing compression stress experienced by at least the second nitride semiconductor layer.
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