发明授权
- 专利标题： Silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件
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申请号： US14769472申请日： 2014-02-04
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公开(公告)号： US09472635B2公开(公告)日： 2016-10-18
- 发明人: Shunsuke Yamada , Taku Horii , Masaki Kijima
- 申请人： Sumitomo Electric Industries, Ltd.
- 申请人地址： JP Osaka-shi
- 专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人： Sumitomo Electric Industries, Ltd.
- 当前专利权人地址： JP Osaka-shi
- 代理机构： Venable LLP
- 代理商 Michael A. Sartori; Laura G. Remus
- 优先权： JP2013-060076 20130322
- 国际申请： PCT/JP2014/052543 WO 20140204
- 国际公布： WO2014/148131 WO 20140925
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/49 ; H01L29/40 ; H01L29/45 ; H01L29/66 ; H01L29/16 ; H01L21/28 ; H01L29/417 ; H01L29/12 ; H01L21/336
摘要：
A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main electrode is directly provided on the silicon carbide substrate. The first barrier layer is provided on the main electrode, and is made of a conductive material containing no aluminum. The interconnection layer is provided on the first barrier layer, is separated from the main electrode by the first barrier layer, and is made of a material containing aluminum.
公开/授权文献
- US20160027891A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 公开/授权日：2016-01-28
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