Invention Grant
- Patent Title: Multilayered substrate
- Patent Title (中): 多层基材
-
Application No.: US14061160Application Date: 2013-10-23
-
Publication No.: US09474167B2Publication Date: 2016-10-18
- Inventor: Yee Na Shin , Seung Eun Lee , Yul Kyo Chung , Doo Hwan Lee
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2012-0158337 20121231
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H05K3/46 ; H01L23/00 ; H05K1/18

Abstract:
Disclosed herein is a multilayered substrate including: a second insulating layer having a fine pattern layer formed on an upper surface thereof; and a third insulating layer having a circuit pattern layer formed on an upper surface thereof and formed of a material different from the second insulating layer, the circuit pattern layer having a pattern pitch larger than that of the fine pattern layer, thereby making it possible to solve a warpage problem and perform refinement and improvement in a degree of integration of an inner wiring.
Public/Granted literature
- US20140182889A1 MULTILAYERED SUBSTRATE Public/Granted day:2014-07-03
Information query