发明授权
US09478408B2 Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
有权
使用RF等离子体循环和清洗从基板处理室除去颗粒的系统和方法
- 专利标题： Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
- 专利标题（中）： 使用RF等离子体循环和清洗从基板处理室除去颗粒的系统和方法
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申请号： US14297745申请日： 2014-06-06
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公开(公告)号： US09478408B2公开(公告)日： 2016-10-25
- 发明人: Hu Kang , Adrien LaVoie
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH CORPORATION
- 当前专利权人地址： US CA Fremont
- 主分类号： H05H1/24
- IPC分类号： H05H1/24 ; H01L21/02 ; C23C16/455 ; H01J37/32 ; C23C16/44
摘要：
Systems and methods for operating a substrate processing system include processing a substrate arranged on a substrate support in a processing chamber. At least one of precursor gas and/or reactive gas is supplied during the processing. The substrate is removed from the processing chamber. Carrier gas and purge gas are selectively supplied to the processing chamber. RF plasma is generated in the processing chamber during N cycles, where N is an integer greater than one. The RF plasma is on for a first period and off for a second period during each of the N cycles. The purge gas is supplied during at least part of each of the N cycles.
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