Invention Grant
- Patent Title: Method for forming film having low resistance and shallow junction depth
- Patent Title (中): 形成低电阻和浅结深度的薄膜的方法
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Application No.: US14622603Application Date: 2015-02-13
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Publication No.: US09478415B2Publication Date: 2016-10-25
- Inventor: Yosuke Kimura , David de Roest
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02
Abstract:
A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.
Public/Granted literature
- US20160240367A1 METHOD FOR FORMING FILM HAVING LOW RESISTANCE AND SHALLOW JUNCTION DEPTH Public/Granted day:2016-08-18
Information query
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