- Patent Title: Cobalt selectivity improvement in selective cobalt process sequence
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Application No.: US14822313Application Date: 2015-08-10
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Publication No.: US09478460B2Publication Date: 2016-10-25
- Inventor: Mei-yee Shek , Weifeng Ye , Li-Qun Xia , Kang Sub Yim , Kelvin Chan
- Applicant: Applied Materials, Inc.
- Applicant Address: US TX Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US TX Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/532 ; H01L21/02 ; H01L21/768 ; H01L21/285 ; H01L21/3105
Abstract:
Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.
Public/Granted literature
- US20160141203A1 COBALT SELECTIVITY IMPROVEMENT IN SELECTIVE COBALT PROCESS SEQUENCE Public/Granted day:2016-05-19
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