Invention Grant
US09478541B2 Half node scaling for vertical structures 有权
用于垂直结构的半节点缩放

Half node scaling for vertical structures
Abstract:
A method for half-node scaling a circuit layout in accordance with an aspect of the present disclosure includes vertical devices on a die. The method includes reducing a fin pitch and a gate pitch of the vertical devices on the die. The method also includes scaling a wavelength to define at least one reduced area geometric pattern of the circuit layout.
Public/Granted literature
Information query
Patent Agency Ranking
0/0