Invention Grant
- Patent Title: Half node scaling for vertical structures
- Patent Title (中): 用于垂直结构的半节点缩放
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Application No.: US14480156Application Date: 2014-09-08
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Publication No.: US09478541B2Publication Date: 2016-10-25
- Inventor: Stanley Seungchul Song , Kern Rim , Jeffrey Junhao Xu , Matthew Michael Nowak , Choh Fei Yeap , Roawen Chen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/088 ; G03F7/00 ; H01L21/8234 ; H01L27/02

Abstract:
A method for half-node scaling a circuit layout in accordance with an aspect of the present disclosure includes vertical devices on a die. The method includes reducing a fin pitch and a gate pitch of the vertical devices on the die. The method also includes scaling a wavelength to define at least one reduced area geometric pattern of the circuit layout.
Public/Granted literature
- US20160071847A1 HALF NODE SCALING FOR VERTICAL STRUCTURES Public/Granted day:2016-03-10
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