发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US14729395申请日: 2015-06-03
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公开(公告)号: US09478547B2公开(公告)日: 2016-10-25
- 发明人: Hiroyuki Kunishima , Masashige Moritoki , Toshiji Taiji , Youichi Yamamoto
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Shapiro, Gabor and Rosenberger, PLLC
- 优先权: JP2014-119047 20140609
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L27/108
摘要:
Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).
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