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US09478547B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing the same
摘要:
Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).
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