Invention Grant
- Patent Title: Methods for fabricating anode shorted field stop insulated gate bipolar transistor
- Patent Title (中): 制造阳极短路绝缘栅双极晶体管的方法
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Application No.: US13192385Application Date: 2011-07-27
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Publication No.: US09478646B2Publication Date: 2016-10-25
- Inventor: Anup Bhalla , Madhur Bobde , Yongping Ding , Xiaotian Zhang , Yueh-Se Ho
- Applicant: Anup Bhalla , Madhur Bobde , Yongping Ding , Xiaotian Zhang , Yueh-Se Ho
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L29/06 ; H01L29/08
Abstract:
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.
Public/Granted literature
- US20130029461A1 METHODS FOR FABRICATING ANODE SHORTED FIELD STOP INSULATED GATE BIPOLAR TRANSISTOR Public/Granted day:2013-01-31
Information query
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