Invention Grant
- Patent Title: Semiconductor device including a resistor and method for the formation thereof
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Application No.: US14602940Application Date: 2015-01-22
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Publication No.: US09478671B2Publication Date: 2016-10-25
- Inventor: Alexandru Romanescu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/8605
- IPC: H01L29/8605 ; H01L49/02 ; H01L27/06
Abstract:
A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material layer, a first contact structure and a second contact structure. The first material layer includes at least one of a metal and a metal compound. The second material layer includes a semiconductor material. The second material layer is provided over the first material layer and includes a first sub-layer and a second sub-layer. The second sub-layer is provided over the first sub-layer. The first sub-layer and the second sub-layer are differently doped. Each of the first contact structure and the second contact structure provides an electrical connection to the second sub-layer of the second material layer.
Public/Granted literature
- US20150137316A1 SEMICONDUCTOR DEVICE INCLUDING A RESISTOR AND METHOD FOR THE FORMATION THEREOF Public/Granted day:2015-05-21
Information query
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