Invention Grant
US09481566B2 Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices 有权
在衬底的相对侧上形成包括MEMS器件和集成电路的半导体结构以及相关结构和器件的方法

  • Patent Title: Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
  • Patent Title (中): 在衬底的相对侧上形成包括MEMS器件和集成电路的半导体结构以及相关结构和器件的方法
  • Application No.: US14416825
    Application Date: 2013-07-08
  • Publication No.: US09481566B2
    Publication Date: 2016-11-01
  • Inventor: Mariam SadakaBernard AsparChrystelle Lagahe Blanchard
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: SOITEC
  • Current Assignee: SOITEC
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • International Application: PCT/IB2013/001487 WO 20130708
  • International Announcement: WO2014/020387 WO 20140206
  • Main IPC: H01L29/40
  • IPC: H01L29/40 B81B7/00 B81C1/00 H03H9/10
Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices
Abstract:
Methods of forming semiconductor devices comprising integrated circuits and microelectromechanical system (MEMS) devices operatively coupled with the integrated circuits involve the formation of an electrically conductive via extending at least partially through a substrate from a first major surface of the substrate toward an opposing second major surface of the substrate, and the fabrication of at least a portion of an integrated circuit on the first major surface of the substrate. A MEMS device is provided on the second major surface of the substrate, and the MEMS device is operatively coupled with the integrated circuit using the at least one electrically conductive via. Structures and devices are fabricated using such methods.
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