Invention Grant
- Patent Title: MEMS structure, cap substrate and method of fabricating the same
- Patent Title (中): MEMS结构，盖基板及其制造方法
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Application No.: US14302982Application Date: 2014-06-12
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Publication No.: US09481567B2Publication Date: 2016-11-01
- Inventor: I-Shi Wang , Yu-Jui Chen , Ting-Ying Chien , Jen-Hao Liu , Ren-Dou Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/14
- IPC: H01L27/14 ; B81B7/00 ; B81C1/00 ; B81B3/00
Abstract:
A micro electro mechanical system (MEMS) structure is provided, which includes a first substrate, a second substrate, a MEMS device and a hydrophobic semiconductor layer. The first substrate has a first portion. The second substrate is substantially parallel to the first substrate and has a second portion substantially aligned with the first portion. The MEMS device is between the first portion and the second portion. The hydrophobic semiconductor layer is made of germanium (Ge), silicon (Si) or a combination thereof on the first portion, the second portion or the first portion and the second portion and faces toward the MEMS device. A cap substrate for a MEMS device and a method of fabricating the same are also provided.
Public/Granted literature
- US20150360938A1 MEMS STRUCTURE, CAP SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-12-17
Information query
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