Invention Grant
- Patent Title: Memory module, memory system having the same, and methods of reading therefrom and writing thereto
-
Application No.: US14921614Application Date: 2015-10-23
-
Publication No.: US09483348B2Publication Date: 2016-11-01
- Inventor: Eun-Jin Yun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0122982 20121101
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/34
Abstract:
A method of reading from a memory module which includes a plurality of memories is provided. The method includes reading data corresponding to a plurality of burst length units from the plurality of memories; correcting an error of the read data using a storage error correction code; and outputting the error corrected data by a unit of data corresponding to one burst length unit.
Public/Granted literature
- US20160041876A1 MEMORY MODULE, MEMORY SYSTEM HAVING THE SAME, AND METHODS OF READING THEREFROM AND WRITING THERETO Public/Granted day:2016-02-11
Information query
