Methods of programming memories include applying a first plurality of programming pulses to the group of memory cells to program first data to the group of memory cells, determining an upper limit of a resulting threshold voltage distribution for the group of memory cells following a particular programming pulse of the first plurality of programming pulses, and applying a second plurality of programming pulses to the group of memory cells to program second data to the group of memory cells, wherein a characteristic of at least one of the programming pulses of the second plurality of programming pulses is at least partially based on the determined upper limit of the threshold voltage distribution. Methods of programming memories further include programming information indicative of usage of memory cells of a page of memory cells to the page of memory cells during a portion of a programming operation.