发明授权
- 专利标题： Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
- 专利标题（中）： 使用离子注入沟槽和包括掩埋结的碳化硅器件在碳化硅中形成掩埋结器件的方法
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申请号： US14297074申请日： 2014-06-05
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公开(公告)号： US09484413B2公开(公告)日： 2016-11-01
- 发明人: Edward Robert Van Brunt , Alexander V. Suvorov , Vipindas Pala , Lin Cheng
- 申请人： Cree, Inc.
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel & Sibley, P.A.
- 主分类号： H01L29/16
- IPC分类号： H01L29/16 ; H01L21/265 ; H01L21/04 ; H01L29/66 ; H01L29/861 ; H01L29/872 ; H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10
摘要：
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.
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