发明授权
US09484454B2 Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
有权
双折叠LDMOS与漂移和PSURF植入物自对准堆叠门“凸起”结构
- 专利标题： Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure
- 专利标题（中）： 双折叠LDMOS与漂移和PSURF植入物自对准堆叠门“凸起”结构
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申请号： US14080758申请日： 2013-11-14
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公开(公告)号： US09484454B2公开(公告)日： 2016-11-01
- 发明人: Sagy Levy , Sharon Levin , Noel Berkovitch
- 申请人： Tower Semiconductor Ltd.
- 申请人地址： IL Migdal Haemek
- 专利权人： Tower Semiconductor Ltd.
- 当前专利权人： Tower Semiconductor Ltd.
- 当前专利权人地址： IL Migdal Haemek
- 代理机构： Bever, Hoffman & Harms, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L21/265 ; H01L21/266 ; H01L21/762 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L29/423 ; H01L29/66 ; H01L21/32 ; H01L21/324 ; H01L29/08 ; H01L29/40
摘要：
A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS transistor's polysilicon gate electrode. Fabrication of the shallow field oxide region is performed through a hard “bump” mask and controlled such that the bump oxide extends a minimal depth into the LDMOS transistor's drift (channel) region. The hard “bump” mask is also utilized to produce an N-type drift (N-drift) implant region and a P-type surface effect (P-surf) implant region, whereby these implants are “self-aligned” to the gate dielectric structure. The N-drift implant is maintained at Vdd by connection to the LDMOS transistor's drain diffusion. An additional Boron implant is utilized to form a P-type buried layer that connects the P-surf implant to the P-body region of the LDMOS transistor, whereby the P-surf implant is maintained at 0V.
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