Invention Grant
- Patent Title: Method for processing wafer
- Patent Title (中): 晶圆处理方法
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Application No.: US14066777Application Date: 2013-10-30
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Publication No.: US09490173B2Publication Date: 2016-11-08
- Inventor: Hubert Maier
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/82 ; H01L21/306 ; H01L21/768 ; H01L23/31 ; H01L21/78 ; H01L21/56
Abstract:
A method for processing a wafer including a plurality of chips is provided. The method may include: forming a trench in the wafer between the plurality of chips; forming a diffusion barrier layer at least over the sidewalls of the trench; forming encapsulation material over the plurality of chips and in the trench; and singularizing the plurality of chips from a side opposite the encapsulation material.
Public/Granted literature
- US20150115448A1 METHOD FOR PROCESSING WAFER Public/Granted day:2015-04-30
Information query
IPC分类:
