Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device

Invention Grant

US09490243B2 Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device 有权

Title translation: 包括ESD保护器件，ESD保护电路，集成电路和制造半导体器件的方法的半导体器件

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Patent Title: Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device
Patent Title (中): 包括ESD保护器件，ESD保护电路，集成电路和制造半导体器件的方法的半导体器件
Application No.: US14419064

Application Date: 2012-08-22
Publication No.: US09490243B2

Publication Date: 2016-11-08
Inventor: Jean Philippe Laine , Patrice Besse
Applicant: Jean Philippe Laine , Patrice Besse
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
International Application: PCT/IB2012/001774 WO 20120822
International Announcement: WO2014/030026 WO 20140227
Main IPC: H01L27/02
IPC: H01L27/02 ; H01L21/8222 ; H01L27/06 ; H01L29/06 ; H01L29/10

Semiconductor device comprising an ESD protection device, an ESD protection circuitry, an integrated circuit and a method of manufacturing a semiconductor device

Abstract:

A semiconductor device is provided which comprises an ESD protection device. The ESD protection device is being formed by one or more pnp transistors which are present in the structure of the semiconductor device. The semiconductor device comprises two portions, of an isolated p-doped region which are separated by an N-doped region. Two p-doped regions are provided within the two portions. The p-dopant concentration of the two-doped region is higher than the p-dopant concentration of the isolated p-doped region. A first electrical contact is connected only via a highly doped p-contact region to the first p-doped region and a second electrical contact is connected only via another highly doped p-contact region to the second p-doped region.

Abstract(Chinese):

提供一种包括ESD保护装置的半导体器件。 ESD保护器件由存在于半导体器件的结构中的一个或多个pnp晶体管形成。半导体器件包括由N掺杂区域分离的隔离p掺杂区域的两个部分。在两个部分内设置两个p掺杂区域。双掺杂区域的p掺杂剂浓度高于分离的p掺杂区域的p掺杂剂浓度。第一电接触仅通过高度掺杂的p接触区域连接到第一p掺杂区域，并且第二电触点仅通过另一个高度掺杂的p接触区域连接到第二p掺杂区域。

Public/Granted literature

US20150311193A1 A SEMICONDUCTOR DEVICE COMPRISING AN ESD PROTECTION DEVICE, AN ESD PROTECTION CIRCUITRY, AN INTEGRATED CIRCUIT AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2015-10-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00	由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）
H01L27/02	.包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的