- 专利标题： Solid state imaging device, method of producing solid state imaging device, and electronic apparatus
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申请号： US14853739申请日： 2015-09-14
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公开(公告)号： US09490284B2公开(公告)日： 2016-11-08
- 发明人: Ryosuke Nakamura
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Chip Law Group
- 优先权： JP2011-063974 20110323
- 主分类号： H01L27/32
- IPC分类号： H01L27/32 ; H01L27/146
摘要：
A solid state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate to generate and accumulate signal charges according to light quantity of incident light; a vertical transmission gate electrode that is formed to be embedded in a groove portion formed in a depth direction from one side face of the substrate according to a depth of the photoelectric conversion unit; and an overflow path that is formed on a bottom portion of the transmission gate to overflow the signal charges accumulated in the photoelectric conversion unit.
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