Invention Grant
- Patent Title: Back side illuminated semiconductor structure with semiconductor capacitor connected to floating diffusion node
- Patent Title (中): 背面照明半导体结构，半导体电容连接到浮动扩散节点
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Application No.: US14659956Application Date: 2015-03-17
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Publication No.: US09490290B2Publication Date: 2016-11-08
- Inventor: Ching-Wei Chen , Wen-Cheng Yen
- Applicant: PIXART IMAGING INC.
- Applicant Address: TW Hsin-Chu County
- Assignee: Pixart Imaging Inc.
- Current Assignee: Pixart Imaging Inc.
- Current Assignee Address: TW Hsin-Chu County
- Agency: Rosenberg, Klein & Lee
- Priority: TW103122206A 20140626; TW103138137A 20141103
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.
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