发明授权
US09490344B2 Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation process
有权
制造具有升高的源极/漏极区域的晶体管器件以适应金属硅化物形成过程中的消耗的方法
- 专利标题： Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation process
- 专利标题（中）： 制造具有升高的源极/漏极区域的晶体管器件以适应金属硅化物形成过程中的消耗的方法
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申请号： US13345922申请日： 2012-01-09
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公开(公告)号： US09490344B2公开(公告)日： 2016-11-08
- 发明人: Stefan Flachowsky , Jan Hoentschel , Thilo Scheiper
- 申请人： Stefan Flachowsky , Jan Hoentschel , Thilo Scheiper
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/334 ; H01L21/336 ; H01L29/66 ; H01L29/78
摘要：
Disclosed herein are various semiconductor devices with dual metal silicide regions and to various methods of making such devices. One illustrative method disclosed herein includes the steps of forming an upper portion of a source/drain region that is positioned above a surface of a semiconducting substrate, wherein the upper portion of the source/drain region has an upper surface that is positioned above the surface of the substrate by a distance that is at least equal to a target thickness of a metal silicide region to be formed in the upper portion of the source/drain region and forming the metal silicide region in the upper portion of the source/drain region.
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